2SD718 Datasheet, transistor equivalent, SavantIC

PDF File Details

Part number:

2SD718

Manufacturer:

SavantIC

File Size:

204.42kb

Download:

📄 Datasheet

Description:

Silicon power transistor.

With TO-3P(I) package

Complement to type 2SB688 APPLICATIONS

Power amplifier applications

Recomme

2SD718 Application

• Applications
• Power amplifier applications
• Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Colle

TAGS

2SD718

SavantIC

📁 Related Datasheet

2SD711 - NPN Power Transistor (Fuji)
2SD711 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE,HIGH SPEED SWITCHING hFE ASO Features High D.C. current.

2SD711 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711 DESCRIPTION ·High DC Current Gain ·Low Collector Saturation Voltage ·Exce.

2SD715 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min)@ IC= 1A ·Collector-Emi.

2SD716 - NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • Complementary to 2SB686. • Remended for 30 ^ 35W High-Fidelity Audio F.

2SD716 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD716 .. DESCRIPTION ·With TO-3P(I) package ·Complem.

2SD716 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- .

2SD717 - NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm 1&9MAX. 0&2±o.2 DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS. -A.

2SD717 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD717 .. DESCRIPTION ·With TO-3P(I) package ·Low col.

2SD717 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- :.

2SD718 - NPN EPITAXIAL SILICON TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION 1  FEATURES * Remended for 45~50W Audi.