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2SD256 Datasheet | Specifications & PDF Download

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2SD256 Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semicon.

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D2560 - 2SD2560

Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=
(12 views)
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2SD2561 - NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 500
(9 views)
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2SD2560 - NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000
(8 views)
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2SD2568 - Power Transistor

2SD2568 Transistors Power Transistor (400V, 0.5A) 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Param
(5 views)

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