2SD999 Datasheet | Specifications & PDF Download

RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(B

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2SD999 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features ， hFE ， 2SB798 。

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SMD Type Transistors NPN Silicon Epitaxial Transistor 2SD999 Features World standard miniature package:SOT-89. Low collector saturation voltage. Ex

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;EWEͿWůĂƐƚŝĐͲ ŶĐĂƉƐƵůĂƚĞdƌĂŶƐŝƐƚŽƌ Ϯ^ϵϵϵ< PRIMARY CHARACTERISTICS PC 500mW VCEO 25V IC 1.0A VCE(sat) 0.4V hFE 200–400 TJ,Max 150℃ FEAT

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NPN Silicon Epitaxial Transistor FEATURES z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linearity

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2SD999 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity SOT-89-3

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