2SK1 Datasheet | Specifications & PDF Download

: SILICON N CHANNEL JUNCTION TYPE 2SK146 LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. DRAIN MARK Unit in mm 6.4MA

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2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Featu

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

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2SK1519, 2SK1520 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · Hig

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Ordering number:EN3556 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1418 Ultrahigh-Spee

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Ordering number:EN3440 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Ap

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Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 0.65±0.15 +0.2 unit: mm 0.65±0.15

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2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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2SK1540(L)(S), 2SK1541(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switch

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2SK1575 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 13 dB, ηD = 65% typ (f = 190 MHz) • Compact pac

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