SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLIC.
Toshiba Semiconductor
K1529 - 2SK1529
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward t.
Toshiba
K1530 - 2SK1530
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward tra.
Hitachi Semiconductor
2SK1526 - Silicon N-Channel MOSFET
2SK1526, 2SK1527 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Inchange Semiconductor
2SK1544 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for.
Renesas
K1516 - 2SK1516
To all our customers www.DataSheet4U.com Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas.
Toshiba Semiconductor
K1531 - 2SK1531
www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com .
Fuji Electric
K1549-R - 2SK1549-R
http://www.Datasheet4U.com http://www.Datasheet4U.com http://www.Datasheet4U.com http://www.Datasheet4U.com http://www.Datasheet4U.com http://www.
NEC
2SK1590 - MOSFET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1590 N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1590, N-channel vertical type MOSFET, is a switching.
Kexin
2SK1590 - N-Channel MOSFET
SMD Type ■ Features ● VDS (V) = 60V ● ID = 0.2 A ● RDS(ON) ＜ 3Ω (VGS = 10V) ● RDS(ON) ＜ 6Ω (VGS = 4V) N-Channel MOSFET 2SK1590 SOT-23 2.9 +0.1 -0..
Sanyo
K1578 - 2SK1578
Ordering number:EN4178A N-Channel Junction FET 2SK1578 Capacitor Microphone Applications Features · Especially suited for use in audio, telephone ca.
Fuji Electric
2SK1503-01 - Fuji power MOSFET
w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
