SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLIC.
2SK1518 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK1518 ESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variat.2SK1507 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600 (Min) ·Minimum Lot-to-Lot variations for .K1518 - 2SK1518
2SK1517, 2SK1518 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High spe.2SK1512 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1512 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Vo.2SK1553 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650 (Min) ·Minimum Lot-to-Lot variations for .K1539 - 2SK1539
www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com Free Datasheet http://www.0PDF.com www.DataSheet4U.com et4U.com.K1529 - 2SK1529
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward t.K1530 - 2SK1530
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward tra.2SK1508 - N-Channel MOSFET
2SK1508 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-F.2SK1529 - Silicon N-Channel MOSFET
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward t.2SK1527 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) isc Product .2SK1544 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for.2SK1526 - Silicon N-Channel MOSFET
2SK1526, 2SK1527 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.