2SK19 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · Hig

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · Hig

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L

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2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot

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2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applicatio

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot

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2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ±

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