2SK209 Datasheet | Specifications & PDF Download

Transistors Small switching (60V, 10A) 2SK2095N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it

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2SK2097 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK2098-01MR FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche

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Free Datasheet http://www.Datasheet-PDF.com/ Free Datasheet http://www.Datasheet-PDF.com/ Free Datasheet http://www.Datasheet-PDF.com/

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2SK2096 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V

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Transistors Small switching (60V, 2A) 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-volta

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2SK2096 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive curre

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2SK2099-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2099-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2098-01MR N-CHANNEL SILICON POWER MOSFET Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconduct

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2SK2099-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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UNISONIC TECHNOLOGIES CO., LTD 2SK209 JFET FIELD EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION TYPE  DESCRIPTION The UTC 2SK209 is an N-channel ju

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