2SK246 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2462 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect

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2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS) 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications U

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2SK2469-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS) 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications U

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effe

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application • High breakdown voltage: VDSS = 180 V •

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect

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Transistors Small switching (60V, 2A) 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-volt

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Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swit

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application • High breakdown voltage: VDSS = 180 V •

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2461 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Mi

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2462 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effe

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