2SK260 Datasheet | Specifications & PDF Download

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistan

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2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source

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2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low d

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2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2602 Switching Regulator Applications z Low drain−source ON-resistance

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2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2601 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Ea

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2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low d

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2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain−source

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2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalan

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2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications

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2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistan

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avala

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