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Renesas Technology
2SK3000 - Silicon N Channel MOS FET
2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features www.DataSh.
Hitachi Semiconductor
2SK3001 - GaAs HEMT Low Noise Amplifier
2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. .
ETC
2SK3004 - MOSFET
2SK3004 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 250 V VGSS ±20 V ID ±18 A * ID .
INCHANGE
2SK3003 - N-Channel MOSFET
isc N-Channel MOSFET Transistor 2SK3003 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Re.
Shindengen Electric Mfg.Co.Ltd
2SK3009 - VX-2 Series Power MOSFET
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3009 (F8S60VX2) 600V 8A FEATURES •œ Input capacitance (Ciss) is small. Especially, .
ETC
K3004 - 2SK3004
2SK3004 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 250 ± 20 ± 18 ± 72 35 (Tc = 25ºC) 120 18 150 –55 to.
Sanken
K3003 - 2SK3003
2SK3003 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 200 ± 20 ± 18 ± 72 35 (Tc = 25ºC) 120 18 150 –55 to.
INCHANGE
2SK3004 - N-Channel MOSFET
isc N-Channel MOSFET Transistor 2SK3004 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Re.
Sanken
2SK3003 - MOSFET
2SK3003 External dimensions 1 FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 200 V VGSS ±20 V ID ±18 A * ID .
Hitachi Semiconductor
2SK3000 - Silicon N Channel MOS FET
2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0..
