2SK360 Silicon N-Channel MOS FET Application VHF .
2SK360 - N-Channel MOSFET
2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25.2SK3600-01SJ - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.2SK3603-01MR - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3603-01MR FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source .2SK3600-01L - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.2SK3600-01S - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.2SK3601-01 - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low drivin.2SK3602-01 - N-CHANNEL SILICON POWER MOSFET
2SK3602-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalan.K3603-01MR - 2SK3603-01MR
2SK3603-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Aval.2SK3602-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3602-01 FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On.2SK3600S - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3600S FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R.2SK3604-01S - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3604-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.2SK3604-01SJ - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3604-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.2SK3607-01MR - N-CHANNEL SILICON POWER MOSFET
2SK3607-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p.K3607-01MR - 2SK3607-01MR
2SK3607-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p.2SK3603-01MR - N-CHANNEL SILICON POWER MOSFET
2SK3603-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Aval.2SK3608S - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3608S FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-R.2SK3608L - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3608L FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-R.2SK3607-01MR - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3607-01MR FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source .2SK3606-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3606-01 FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On.2SK3604L - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3604L FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-R.