TOSHIBA Field Effect Transistor Silicon N Channel .
K3686-01 - 2SK3686-01
2SK3686-01 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 Super FA.2SK368 - N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applic.K3683 - 2SK3683
www.DataSheet4U.com PRELIM INARY 2SK3683-01MR (500V/0.38Ω/19A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current G.2SK3682-01 - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3682-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee.2SK3687-01MR - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3687-01MR FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High sp.2SK3684-01SJ - N-CHANNEL SILICON POWER MOSFET
2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No .2SK3688-01S - N-CHANNEL SILICON POWER MOSFET
2SK3688-01L,S,SJ Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWE.2SK3681-01 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-.2SK3681 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·With low gate drive requirements ·100% avalanche .2SK3687-01MR - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3687-01MR FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source .2SK3684-01L - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3684-01L FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source O.2SK3683-01MR - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3683-01MR FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source .2SK3684-01S - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3684-01S FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source O.2SK3689-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3689-01 FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On.2SK3688-01SJ - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK3688-01SJ FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source .2SK3683-01MR - N-CHANNEL SILICON POWER MOSFET
2SK3683-01MR FUJI POWER MOSFET Super FAP-G Series 200309 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanch.2SK3680-01 - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3680-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee.2SK3681-01 - N-CHANNEL SILICON POWER MOSFET
2SK3681-01 FUJI POWER MOSFET Super FAP-G Series 200401 N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching No secon.K3689-01 - 2SK3689-01
www.DataSheet4U.com 2SK3689-01 FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee.2SK3686-01 - N-CHANNEL SILICON POWER MOSFET
www.DataSheet4U.com 2SK3686-01 FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High spee.