2SK61 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·100% avalanche tested ·Minimum Lot-t

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-t

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Silicon MOS FETs (Small Signal) 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 s Features q Low ON-resistance RDS(

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Silicon MOS FETs (Small Signal) 2SK615 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance q High-speed switching q Allo

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Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·100% avalanche

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