Part number:
2SK614
Manufacturer:
Panasonic Semiconductor
File Size:
74.15 KB
Description:
Silicon n-channel mosfet.
* 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipati
2SK614
Panasonic Semiconductor
74.15 KB
Silicon n-channel mosfet.
📁 Related Datasheet
2SK61 - Silicon N-Channel Junction FET
(ETC)
Free Datasheet http://.datasheet-pdf./
Free Datasheet http://.datasheet-pdf./
Free Datasheet http://.datasheet-pdf./
Free Datashe.
2SK610 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-t.
2SK611 - MOS FIELD EFFECT POWER TRANSISTOR
(NEC)
.
2SK612 - MOS Field Effect Power Transistors
(NEC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK612 - MOS Field Effect Power Transistors
(ETC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK612-Z - MOS Field Effect Power Transistors
(NEC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK612-Z - MOS Field Effect Power Transistors
(ETC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK613 - Silicon N-Channel Junction FET
(Sony)
Powered by ICminer. Electronic-Library Service CopyRight 2003
Powered by ICminer. Electronic-Library Service CopyRight 2003
Powered by ICminer.