30.0A Datasheet | Specifications & PDF Download

MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

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AMT630A Video Display Controller (Product Specification) Version 1.1 2014.10 2014-09 1 AMT630A Specification (V1.0) Revision Record: Date 2014-09

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Surge Current Capability  High Reliability  Ideally Suited for

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TDA2030A 18 W hi-fi amplifier and 35 W driver Features ■ Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ) ■ Very

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AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance p

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AP2960 Chipown 30V 3.0A Synchronous CV/CC Step-Down Converter General Description AP2960 is a wide input voltage, high efficiency Synchronous CC/CV

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60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv

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www.DataSheet4U.net SAMSUNG SDI Confidential Proprietary. Spec. No. ICR18650-30A Version No. 0.0 SPECIFICATION OF PRODUCT for Lithium-ion Rechar

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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UNISONIC TECHNOLOGIES CO., LTD TDA2030A LINEAR INTEGRATED CIRCUIT 18W HI-FI AUDIO AMPLIFIER AND 35W DRIVER  DESCRIPTION The UTC TDA2030A is a mon

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Global LCD Panel Exchange Center www.panelook.com Samsung Secret Product Information Customer : Haier DATE : 18. Oct. 2011 SAMSUNG TFT-LCD MODEL :

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TDA2030A 18 W hi-fi amplifier and 35 W driver Features ■ Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ) ■ Very

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NPN 3DG3020 A1-HK ○R 3DG3020 A1-HK NPN ， ， ， 、。 ● ● ● ● ● ● ● ● -10℃～40℃ 1 265℃ ＜85％ VCEO IC Ptot （Ta=25℃） 450 1.5 0

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LXDC Series μDCDC Converters Features zz Low EMI noise and small footprint due to Murata’s Shown larger than actual size. inductor-embedded ferrite

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PR3001 - PR3005 3.0A FAST RECOVERY RECTIFIER Features · · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low

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PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-

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