3055 Datasheet | Specifications & PDF Download

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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2N3055H 15A Power Transistors Features: • The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head po

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P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary t

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( DataSheet : www.DataSheet4U.com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)

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XR33052/XR33053/XR33055/XR33058 ±60V Fault Tolerant 3.0V to 5.5V RS-485/RS-422 Transceivers Description The XR33052, XR33053, XR33055, and XR33058 (X

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APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltag

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Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching a

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Complementary Silicon High-Power Transistors 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) These PowerBase complementary transistors are designed fo

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2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−pur

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Curr

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.3 NPN POWER TRANSISTOR 2N3055HV TO-3

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2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar N

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gai

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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