3055 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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2N3055H 15A Power Transistors Features: • The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head po

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=70-140 @IC = 4A ·Collector-Emitter Saturation Voltag

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA

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APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V

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® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) =

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www.DataSheet4U.com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(B

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( DataSheet : www.DataSheet4U.com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)

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Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-ef

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( DataSheet : www.DataSheet4U.com ) 2N3055ESMD Dimensions in mm (inches). 0.89 (0.035) min. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 3.60

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PHP/PHD3055E TrenchMOS™ standard level FET Rev. 06 — 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LSG TO-263 Lead Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 50mƸ ID

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- :

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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www.DataSheet4U.com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RD

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