3055 MULTIPLEXED TWO-WIRE HALL EFFECT SENSOR IC DI.
2N3055 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-.TIP3055 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta.2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS
TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector.P3055LDG - N-Channel MOSFET
P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA.2N3055 - Complementary Power Transistors
2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation.2N3055A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary t.STU3055L2-60 - N-Channel Enhancement Mode Field Effect Transistor
www.DataSheet4U.com STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUM.RCA3055 - Power Transistor
File No. 618 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OOCTI5LJD Solid State Division Power Transistors RCA3054 RCA3055 Hometa.TIP3055 - Complementary power transistors
TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application.2N3055 - NPN Power Transistor
Power Transistor (NPN) Features • General Purpose Switching and Amplifier Applications • RoHS Compliant Power Transistor (NPN) 2N3055 Mechanical Dat.MJE3055T - NPN Transistor
isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-1.2N3055 - NPN Power Silicon Transistor
NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 (TO-204AA) Package Maximum Ratings .2N3055 - Complementary Silicon Power Transistors
Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching a.2N3056 - (2N3055 / 2N3056) Bipolar NPN Device
2N3055/6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar N.2N3055 - Silicon NPN Power Transistor
2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The 2N3055 is a silicon NPN transistor in a T.2N3055HV - NPN Power Transistor
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.3 NPN POWER TRANSISTOR 2N3055HV TO-3 .2N3055 - NPN Power Silicon Transistor
2N3055 NPN Power Silicon Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF19500/407 TO-3 (TO-204AA) Package Rev. V1 Electrical Cha.TIP3055 - NPN Silicon Power Transistors
Complementary Silicon Power Transistors TIP3055 (NPN), TIP2955 (PNP) Designed for general−purpose switching and amplifier applications. Features • DC .2N3055A - Complementary Silicon High-Power Transistor
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed fo.