3055 Datasheet | Specifications & PDF Download

Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect NDT3055L General Description This Logic Level N−Channel enhancement mode power fie

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collecto

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

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MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz

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Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching a

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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SILICON NPN POWER TRANSISTOR 2N3055 Features: • High Gain At High Current. • Hermetic TO-3 (TO-204AA) Metal Package. • Ideally Suited For General Purp

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N–Channel Enhan

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TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application

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NTD3055L170, NVD3055L170 MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 9.0 A, 60 V Designed for low voltage, high speed switching applications i

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gai

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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isc Silicon NPN Power Transistor 2SC3055 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(sus)= 400V(Min) ·High Switching Speed ·Wide

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N-Channel Enhancement Mode Field Effect Transistor NDT3055 General Description These N−Channel enhancement mode power field effect transistors are pr

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltag

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isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- :

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2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The 2N3055 is a silicon NPN transistor in a T

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May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transisto

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August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode

Rating: 1 ★ (6 votes)