30N15 Datasheet | Specifications & PDF Download

FDB0630N1507L N-Channel PowerTrench® MOSFET September 2016 FDB0630N1507L N-Channel PowerTrench® MOSFET 150 V, 130 A, 6.4 mΩ Features General Descr

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CYStech Electronics Corp. Spec. No. : C838H8 Issued Date : 2016.09.08 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE030N

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150V N-Channel MOSFETs PDD30N15 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N15 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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150V N-Channel MOSFETs PDC30N15X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog

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CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super

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CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE030N1

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X3-Class HiPerFETTM Power MOSFET IXFP130N15X3 IXFH130N15X3 N-Channel Enhancement Mode Avalanche Rated D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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MOSFET – N-Channel, POWERTRENCH) 150 V, 169 A, 6.3 mW FDBL0630N150 Features • Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A • Typ Qg(tot) = 70 nC at VG

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UNISONIC TECHNOLOGIES CO., LTD UT30N15H 30A, 150V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UT30N15H is a N-channel mode power MOSFE

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE030N15RJ3 Spec. No. : C838J3 Issued Date : 2016.11.18 Revised Date : Page No. :

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CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 Spec. No. : C838Q8 Issued Date : 2016.06.29 Revised Date : Page No. :

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X4-Class Power MOSFETTM Advance Technical Information IXTP130N15X4 IXTH130N15X4 VDSS = ID25 = RDS(on) 150V 130A 8.5m N-Channel Enhancement Mode

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X4-Class Power MOSFETTM Advance Technical Information IXTA130N15X4 IXTA130N15X4-7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)

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isc N-Channel MOSFET Transistor IXFA130N15X3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0mΩ@VGS=10V ·Fully characterized avalanche vo

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS

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Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on)

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS

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150V N-Channel MOSFETs PDP30N15 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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