30N15 Datasheet | Specifications & PDF Download

Description AP30N15PIT 150V N-Channel Enhancement Mode MOSFET The AP30N15P/T uses advanced APM-SGT II technology to provide excellent RDS(ON), low g

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Description AP30N15PIT 150V N-Channel Enhancement Mode MOSFET The AP30N15P/T uses advanced APM-SGT II technology to provide excellent RDS(ON), low g

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RP130x SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-173-131031 OUTLINE The RP130x Series are CMOS-based positive voltage regulator ICs with high ripp

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N15 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS

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X4-Class Power MOSFETTM Advance Technical Information IXTP130N15X4 IXTH130N15X4 VDSS = ID25 = RDS(on) 150V 130A 8.5m N-Channel Enhancement Mode

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS

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isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤53mΩ ·Enhancement mode: ·100% avalanch

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GSMDC30N15X 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolo

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RP130x SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-173-131031 OUTLINE The RP130x Series are CMOS-based positive voltage regulator ICs with high ripp

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Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on)

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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS

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Green Product STU/D30N15 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V

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X4-Class Power MOSFETTM Advance Technical Information IXTA130N15X4 IXTA130N15X4-7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤53mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

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X3-Class HiPerFETTM Power MOSFET IXFP130N15X3 IXFH130N15X3 N-Channel Enhancement Mode Avalanche Rated D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super

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CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE030N15RQ8 Spec. No. : C838Q8 Issued Date : 2016.06.29 Revised Date : Page No. :

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