30P06 Datasheet | Specifications & PDF Download

30P06-VB 30P06-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID

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G230P06K P-Channel Enhancement Mode Power MOSFET Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G230P06K P-Channel Enhancement Mode Power MOSFET Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured

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SPD30P06PG SPD30P06PG P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.046 at VGS = - 10 V 0.058 at VGS =

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technolog

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Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P

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Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P–Ch

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P-Channel 60 V (D-S) MOSFET DTU30P06 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.107 at VGS = - 10 V 0.130 at VGS = - 4.5 V ID (A)

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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UNISONIC TECHNOLOGIES CO., LTD UTT30P06 -60V, -30A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advan

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