30P06 Datasheet | Specifications & PDF Download

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS

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www.DataSheet4U.com MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energ

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MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and comm

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CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P

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P-Channel 60 V (D-S) MOSFET DTU30P06 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.107 at VGS = - 10 V 0.130 at VGS = - 4.5 V ID (A)

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P–Ch

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MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and comm

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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30P06-VB 30P06-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID

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G230P06K P-Channel Enhancement Mode Power MOSFET Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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AP30P06G-AU P-Channel Enhancement Mosfet Features ⚫ -60V, -26A RDS（ON）<29mΩ＠VGS=-10V TYP:24mΩ RDS（ON）<39mΩ＠VGS=-4.5V TYP:30.4mΩ ⚫ Advanced Trench Tec

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UNISONIC TECHNOLOGIES CO., LTD UTT30P06 -60V, -30A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advan

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technolog

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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G230P06K P-Channel Enhancement Mode Power MOSFET Description The G230P06K uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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SPD30P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage

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Analog Power P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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