3357 Datasheet | Specifications & PDF Download

Order this document by MC3357/D Low Power Narrowband FM IF . . . includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Fil

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NJM3357 LOW POWER NARROW BAND FM IF ■ GENERAL DESCRIPTION The NJM3357 includes Oscillator, Mixer, Limiting Amplifier Quadrature Discriminator, Activ

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design AM3359, AM3358, AM3357, AM3356, AM3354, AM335

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Product Folder Order Now Technical Documents Tools & Software Support & Community TS5A3357 SCDS177B – OCTOBER 2004 – REVISED AUGUST 2018 Single

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NJM3357 LOW POWER NARROW BAND FM IF ■ GENERAL DESCRIPTION The NJM3357 includes Oscillator, Mixer, Limiting Amplifier Quadrature Discriminator, Activ

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3357 PACKAGE TO-

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3.0 inch ( 76.2mm ) 5X7 DOT MATRIX LED DISPLAY DESCRIPTION UVP-3X57 SERIES The UVP-3X57SERIES is 3.0 inch (76.2mm) height 5X7 dot matrix display. Si

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NJM3357 LOW POWER NARROW BAND FM IF ■ GENERAL DESCRIPTION The NJM3357 includes Oscillator, Mixer, Limiting Amplifier Quadrature Discriminator, Activ

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TS5A3357-Q1 www.ti.com

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General Purpose Relays Industrial Relays Power Relay RM 2/3/7 n 2/3 pole 10/16A, 2 form C (CO) or 3 form C (CO) contacts n Switching capacity up to 60

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R3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC Copyright © 1997, Power Innovations Limited, UK DECEMBER 1995 - REVISED

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NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATU

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Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 FEATURES Pb z Low Noise and High Gain Lead-free NF = 1.1 dB T

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SMD Type NPN Silicon RF Transistor 2SC3357 IC Transistors Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3357 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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DATASHEET ISL33354E, ISL33357E 5V, ±15kV ESD Protected, Two Port, Dual Protocol (RS-232/RS-485) Transceivers FN8775 Rev 1.00 Oct 21, 2016 The ISL33

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UNISONIC TECHNOLOGIES CO., LTD 2SC3357 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION POWER MINI

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AP63356Q/AP63357Q Green AUTOMOTIVE-COMPLIANT, 32V, 3.5A LOW IQ SYNCHRONOUS BUCK CONVERTER Description The AP63356Q/AP63357Q is an automotive-complian

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DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transist

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