34-Channel Datasheet | Specifications & PDF Download

AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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Analog Power Freescale N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS

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ASW3410 2:1/1:2 USB3.1 /        11212µ0.2K5AGµVVAGHDHHzDBzM，E1-S81D.0d：BQ1.F5VN5V        HDPCDPIMEI ASW3410。 2:1 1:2 ， ASW34

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FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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AONS36344 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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www.DataSheet4U.com Rev 2: Nov 2004 AO3402, AO3402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3

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Etek Microelectronics ET2342 4.1 ET23424.1。IIC。 ，9，， 。 ET234292，9。 ，ET2342 ，。  IIC  9  2： +15 ~ -79dB ， 1dB/  1: +15 ~ -79dB , 1dB/   (

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a FEATURES 80 MSPS Wideband Inputs (14 Linear Bits Plus Three RSSI) Processes Two WCDMA Channels (UMTS or CDMA2000 1؋) or Four GSM/EDGE, IS136 Channel

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OEM: Hitachi MOSFET Transistor 2SK343 / K343 Datasheet N-Channel MOSFET Transistor 2SK343 / K343 140V / 8A DATASHEET OEM – Hitachi Source: Hitac

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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isc N-Channel MOSFET Transistor 2SK3431 FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 m

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3408 is a switching device wh

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AO3401A 30V P-Channel MOSFET General Description Product Summary The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gat

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AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS

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 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  Thi

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HA13158A 34 W × 4-Channel BTL Power IC ADE-207-263A (Z) 2nd Edition Jul. 1999 Description The HA13158A is four-channel BTL amplifier IC designed for

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SM7342EKKP Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 (ESD Protection) 30V/67A RDS(ON)=4.3mΩ(max.)@VGS=10V RDS(ON)=7.2mΩ(max.)@VGS=

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