3422 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching 2SC3422 Unit: mm • Suitable

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www.DataSheet4U.com MCP3422/3/4 18-Bit, Multi-Channel ΔΣ Analog-to-Digital Converter with I2C™ Interface and On-Board Reference Features • 18-bit ΔΣ

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Alfa-MOS Technology General Description AFN3422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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LMG3422R030, LMG3426R030 SNOSDA7E – SEPTEMBER 2020 – REVISED FEBRUARY 2024 LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Tempe

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community ADC3421, ADC3422, ADC3423, ADC3424 SBAS673A – JULY 2014 – RE

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AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3422 uses advanced trench technology to provide excellent RDS(ON)

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a IMVP-II-Compliant Core Power Controller for Mobile CPUs ADP3422 FUNCTIONAL BLOCK DIAGRAM VCC FEATURES Certified IMVP-II Controller Excellent Trans

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Cool-Power® PI34xx-00 8 V to 18 Vin, 15 A Cool-Power ZVS Buck Regulator Product Description The PI34xx-00 is a family of high efficiency DC-DC ZVS-B

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UNISONIC TECHNOLOGIES CO., LTD 3422 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE DUAL BIPOLAR OPERATINAL AMPLIFIER  DESCRIPTION The UTC 3422 is a d

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a Dual Low Power CMOS Analog Front End with DSP Microcomputer AD73422 FUNCTIONAL BLOCK DIAGRAM POWER-DOWN CONTROL DATA ADDRESS GENERATORS DAG 1 DAG 2

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3422 PRELIMINARY INFORMATION (subject to change without notice) Februaryt 21, 2003 HALL-EFFECT, DIRECTION-DETECTION SENSORS The A3422xKA Hall-effect

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A3422 Hall Effect Direction Detection Sensor IC Last Time Buy These parts are in production but have been determined to be LAST TIME BUY. This classif

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Product Description The PE423422 is a HaRP™ technology-enhanced reflective SPDT RF switch. It has received AEC-Q100 Grade 2 certification and meets th

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isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Complement to

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TVS Diode Arrays (SPA®®Diodes) Low Capacitance ESD Protection - SP3422 SP3422 0.2pF 22kV Diode Array RoHS Pb GREEN Description The SP3422 integrates

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