Features ■ Snap-in installation ■ Fully sealed.
New Jersey Semi-Conductor
2N3632 - RF & MICROWAVE TRANSISTORS
Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ .
ON Semiconductor
FDH3632 - N-Channel MOSFET
MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (t.
Alpha & Omega Semiconductors
AONX36324 - 30V Dual Asymmetric N-Channel MOSFET
AONX36324 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Cap.
Motorola
2N3632 - NPN silicon RF Power transistors
2N3375(SILlCON)\ 2N3553 2N3632 2N 3961 •CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected ·CASE 36 (10·60) to Case .. Col.
Fairchild Semiconductor
FDI3632 - N-Channel MOSFET
FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), .
Integrated Device Technology
IDT723632 - CMOS Bidirectional SyncFIFO memory
CMOS SyncBiFIFO™ 256 x 36 x 2, 512 x 36 x 2, 1024 x 36 x 2 Integrated Device Technology, Inc. IDT723622 IDT723632 IDT723642 FEATURES: • Free-running.
Way Jun
LEDS3632UY11 - 7 Segment Single Digit LED Display
Segment Digit LED Display 1. 7 Segment Single Digit LED Display 1.1 Common Anode 0.36 Inch (9.14mm) PRODUCT DESCRIPTION (1) 0.36 Inch (9.14mm) Digit .
Way Jun
LEDT3632TW1CG - Segment Digit LED Display
Segment Digit LED Display 3.2 Common Cathode 0.36 Inch (9.14mm) PRODUCT DESCRIPTION (1) Three Digit 0.36 Inch (9.14mm) Height (2) Low current operati.
Way Jun
LEDQ3632UY11 - Segment Digit LED Display
Segment Digit LED Display 4. 7 Segment Four Digit LED Display 4.1 Common Anode 0.36 Inch (9.14mm) PRODUCT DESCRIPTION (1) Three Digit 0.36 Inch (9.14.
ON Semiconductor
FDB3632 - N-Channel MOSFET
MOSFET – Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (t.
INCHANGE
FDB3632 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9m.
Fairchild Semiconductor
FDB3632 - N-Channel MOSFET
FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), .
Fairchild Semiconductor
FDH3632 - N-Channel MOSFET
FDB3632 / FDP3632 / FDI3632 / FDH3632 November 2004 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rD.
Fairchild Semiconductor
FDP3632 - N-Channel MOSFET
FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), .
National Semiconductor
DS3632 - CMOS Dual Peripheral Drivers
DS1631 DS3631 DS1632 DS3632 DS1633 DS3633 DS1634 DS3634 CMOS Dual Peripheral Drivers July 1992 DS1631 DS3631 DS1632 DS3632 DS1633 DS3633 DS1634 DS36.
Rohm
BA3632K - Pre / power amplifier for 1.5V headphone stereos
Audio ICs Pre / power amplifier for 1.5V headphone stereos BA3632K The BA3632K is a dual-channel pre / power system IC designed for 1.5V headphone st.
Etron Technology Inc.
EM636327 - 512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)
EtronTech Features • • • • • • Fast access time from clock: 5/5/5.5/6.5/7.5 ns Fast clock rate: 183/166/143/125/100 MHz Fully synchronous operation In.
TriQuint Semiconductor
TQ3632 - Low Current/ 3V PCS Band CDMA LNA IC
WIRELESS COMMUNICATIONS DIVISION TQ3632 C2 Control Logic C2 L1 DATA SHEET VDD GND GND Low Current, 3V PCS Band CDMA LNA IC RF IN LNA gnd RF 5.
