.
Data Delay Devices
3D7408 - MONOLITHIC 8-BIT PROGRAMMABLE DELAY LINE
3D7408 MONOLITHIC 8-BIT PROGRAMMABLE DELAY LINE (SERIES 3D7408) FEATURES • • • • • • • • • • • • All-silicon, low-power CMOS technology TTL/CMOS comp.
WANMING
HGK3DE332 - High Voltage Ceramic Disc Capacitors
High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat.
WANMING
HGK3DE392 - High Voltage Ceramic Disc Capacitors
High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat.
WANMING
HGK3DB222 - High Voltage Ceramic Disc Capacitors
High Voltage Ceramic Disc Capacitors SPECIFICATION No: WM-S050104-C01 MENTION ITEM 1. Scope 2. Relative Standards 3. Quality 4. Operating Themperat.
Cypress Semiconductor
CY7C1363D - 9-Mbit Flow-Through SRAM
CY7C1363D 9-Mbit (512K × 18) Flow-Through SRAM 9-Mbit (512K × 18) Flow-Through SRAM Features ■ Supports 133 MHz bus operations ■ 512K × 18 common I/O.
ISSI
IS43DR16640C - DDR2 DRAM
IS43/46DR81280C IS43/46DR16640C 128Mx8, 64Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatibl.
ISSI
IS43DR81280C - DDR2 DRAM
IS43/46DR81280C IS43/46DR16640C 128Mx8, 64Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatibl.
ISSI
IS43DR32801B - 256Mb DDR2 DRAM
IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data r.
ISSI
IS43DR32801A - 8Mx32 256Mb DDR2 DRAM
IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM PRELIMINARY INFORMATION SEPTEMBER 2010 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V •.
ISSI
IS43DR32800A - 8Mx32 256Mb DDR2 DRAM
IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM PRELIMINARY INFORMATION SEPTEMBER 2010 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V •.
ISSI
IS43DR32160C - 16Mx32 512Mb DDR2 DRAM
IS43/46DR32160C 16Mx32 512Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double d.
ISSI
IS43DR86400D - DDR2 DRAM
IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) .
ISSI
IS43DR16320D - DDR2 DRAM
IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) .
ESMT
M13D64322A - Low Power DDR SDRAM
ESMT LPDDR SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe .
Data Delay Devices
3D3608 - 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS
3D3608 & 3D3612 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS (SERIES 3D3608 & 3D3612: PARALLEL INTERFACE) FEATURES • • • • • • • • • All-silicon, low.
White Electronic Designs
W3DG7216V-JD1 - SDRAM UNBUFFERED
White Electronic Designs 128MB - 16Mx72 SDRAM, UNBUFFERED FEATURES PC100 and PC133 compatible Burst Mode Operation Auto and Self Refresh capability LV.
Hynix Semiconductor
H5TQ2G63DFR-xxL - 2Gb DDR3 SDRAM
2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-xxI H5TQ2G63DFR-xxI H5TQ2G83DFR-xx.
Chinfa Electronics Ind
KAD07503D - OPEN FRAME AC - DC POWER MODULE
KAD07 SERIES OPEN FRAME AC - DC POWER MODULE 6.3 ~ 7.6W UL / cUL / TUV / CE FEATURES ‧AC/DC POWER MODULE ‧UNIVERSAL INPUT 85 ~ 265 VAC ‧HIGH EFFICIE.
Cypress
CY7C1383D - 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
Not Recommended for New Designs. CY7C1381D CY7C1383D CY7C1383F 18-Mbit (512K × 36/1M × 18) Flow-Through SRAM 18-Mbit (512K × 36/1M × 18) Flow-Throug.
ISSI
IS43DR86400E - DDR2 DRAM
IS43/46DR86400E IS43/46DR16320E 64Mx8, 32Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) .
