3DD102 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·C

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102D DESCRIPTION ·With TO-3 packaging ·Large collector current

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·C

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transist

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