3nS Datasheet | Specifications & PDF Download

PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Ava

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SM4833NSK Features · 30V/17A, RDS(ON)= 4mW(max.) @ VGS= 10V RDS(ON)= 5.6mW(max.) @ VGS= 4.5V · Super High Dense Cell Design · Reliable and Rugged · Le

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For Video Equipment MN67603NS NTSC Color Camera Synchronizing Signal Generator LSI Overview The MN67603NS is a CMOS LSI that generates NTSC color cam

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CTL1103NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, I

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SM1A23NSFP Features · 100V/13A, RDS(ON)= 100mW(max.) @ VGS= 10V RDS(ON)= 110mW(max.) @ VGS= 4.5V · Reliable and Rugged · Lead Free and Green Devices A

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OBSOLETE LM2402 www.ti.com SNOS445B – AUGUST 1999 – REVISED APRIL 2013 LM2402 Monolithic Triple 3 nS CRT Driver Check for Samples: LM2402 FEATURE

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS07-12612-3E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95130M Series MB95136M/F133M

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LH28F320S3NS, Reliability Test Report

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CTL0343NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 58m, at VGS= 10V

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Cosemitech Automotive Product Group FEATURES and FUNCTIONAL DIAGRAM CHA44X/CH44X This is advanced information on a new product now in development or

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( DataSheet : www.DataSheet4U.com ) w w w t a .D S a e h t e U 4 . m co

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IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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KU10R23NS Thyristor Surge Suppressors 190V, 100A Feature ・Bi-directional characteristic ・High-speed response characteristic ・Large surge current capac

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for target applications • V GS=25

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Multilayer Chip Inductors LL1005-FH Series TYPE LL1005-FH Series Inductance Range: 1.0~100nH (E-12) Temperature Coefficient of L: + 250ppm/°C typica

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Signal Relays IM Relay AXICOM n Slim line 10x6mm, low profile 5.65mm and min. board-space 60mm2 n Switching current 2/5A, switching power 60W/62.5VA

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