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SM4833NSK Features · 30V/17A, RDS(ON)= 4mW(max.) @ VGS= 10V RDS(ON)= 5.6mW(max.) @ VGS= 4.5V · Super High Dense Cell Design · Reliable and Rugged · Le

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CTL1103NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, I

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SM1A23NSFP Features · 100V/13A, RDS(ON)= 100mW(max.) @ VGS= 10V RDS(ON)= 110mW(max.) @ VGS= 4.5V · Reliable and Rugged · Lead Free and Green Devices A

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CTL0343NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 58m, at VGS= 10V

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Cosemitech Automotive Product Group FEATURES and FUNCTIONAL DIAGRAM CHA44X/CH44X This is advanced information on a new product now in development or

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KU10R23NS Thyristor Surge Suppressors 190V, 100A Feature ・Bi-directional characteristic ・High-speed response characteristic ・Large surge current capac

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for target applications • V GS=25

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PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Ava

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Signal Relays IM Relay AXICOM n Slim line 10x6mm, low profile 5.65mm and min. board-space 60mm2 n Switching current 2/5A, switching power 60W/62.5VA

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SM7A23NSF/SM7A23NSFP/SM7A23NSU/ SM7A23NSUB/SM7A23NSUD/SM7A23NSVA ® N-Channel Enhancement Mode MOSFET Features · 700V/5.5A, RDS(ON)= 1.1W(max.) @ VG

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SM2203NSQG Features • 30V/7.4A, RDS(ON) = 20.5mΩ(max.) @ VGS =10V RDS(ON) = 28.5mΩ(max.) @ VGS =4.5V • Reliable and Rugged • Lead Free and Green Devic

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OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC1) for target applications • 150 °C operating tempera

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SM7A23NSF/SM7A23NSFP/SM7A23NSU/ SM7A23NSUB/SM7A23NSUD/SM7A23NSVA ® N-Channel Enhancement Mode MOSFET Features · 700V/5.5A, RDS(ON)= 1.1W(max.) @ VG

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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SM6A23NSF/SM6A23NSFP/ SM6A23NSU/SM6A23NSUB ® N-Channel Enhancement Mode MOSFET Features · 600V/6A, RDS(ON)= 0.86W(max.) @ VGS= 10V V @Tj, max= 700V

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