4.5V Datasheet | Specifications & PDF Download

AP8003 Chipown 5V AP8003PFM500VMOSFET，。AP8003 500V，、。，，， 。AP8003EMI。 ■ 500VMOSFET ■ ■ Buck、Buck-Boost、Flyback ■ 5V ■ 150mA @230VAC ■ EMI ■ ■ 

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U T C LM317L LINEAR INTEGRATED CIRCUIT LOW CURRENT 1.25V TO 37V ADJUSTABLE VOLTAGE REGULATOR DESCRIPTION The UTC LM317L is a monolithic integrated cir

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uP1540 5V/12V Synchronous-Rectified Buck Controller General Description The uP1540 is a compact synchronous-rectified buck controller specifically d

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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SW6008 5V/3.1A Type-C Solution Power Bank 5V/3.1A Type-C Solution Power Bank 1. General Description The SW6008 is a highly integrated power manageme

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ETA9640 5V/1A Synchronous Boost with 1A Linear Charger for Power Bank DESCRIPTION The ETA9640 is a fully integrated power management unit specificall

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uP6103 5V/12V Synchronous-Rectified Buck Controller with Reference Input General Description The uP6103 is a compact synchronous-rectified buck contro

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Relé miniatura / Miniature relay • 1 contato reversível para 15A • Montagem direta em circuito impresso • Selado • Homologado UL AX Chave de código

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uP6101 5V/12V Synchronous-Rectified Buck Controller General Description The uP6101 is a compact synchronous-rectified buck controller specifically des

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www.DataSheet4U.com S E M I C O N D U C T O R HIN200 thru HIN213 +5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors De

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3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ =

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awinic Confidential AW88298 May. 2022 V1.6 I2S/TDM Input, 10.25V BOOST Digital Smart K Audio Amplifier FEATURES ⚫ Smart BOOST with total efficiency

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 www.szyucan.com  Application Note: SY7088 2.3V Minimum Input and 5.5V Maximum Output 3A Peak Current Synchronous Boost with Output Disconnect Prelim

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PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm

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MX25V4006E MX25V4006E DATASHEET P/N: PM1638 1 REV. 1.4, NOV. 14, 2013 http://www.Datasheet4U.com MX25V4006E Contents FEATURES

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA 500 mW DO-35 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP GENERAL

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() CRST049N08N, CRSS046N08N SkyMOS1 N-MOSFET 85V, 4.1mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

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MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The MAX220–MAX249 family of line drivers/receivers is intended

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