40N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175 °C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.022 at VGS = 10 V

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N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 www.din-tek.jp DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Pow

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem

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VBZFB40N06 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configura

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IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °

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FDI040N06 N-Channel PowerTrench® MOSFET June 2009 FDI040N06 N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ Features • RDS(on) = 3.2mΩ ( Typ.) @ VGS

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HM40N06D N-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) wit

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Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS

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R MAIN CHARACTERISTICS IC VCES Vcesat-typ （@Vge=15V） 40 A 650V 2.1V N N-CHANNEL IGBT JT040N065WED Package   UPS APPLICATIONS  General p

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HRP140N06K HRP140N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Char

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TO-220 TO-251S (IPAK) TSM340N06 60V N-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performa

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N，IIPP040N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancem

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SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175 °C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 60 0.022 at VGS = 10 V

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Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g

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HRF140N06K HRF140N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 40 A  Unrivalled Gate Charge : 40 nC (Typ.)  Lower RDS(ON) : 11.5

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Public IPP040N06NF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 60 V Features • Optimized for wide range of applications • N‑channel, no

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