40N120 Datasheet | Specifications & PDF Download

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching

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NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60

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1200V XPTTM GenX4TM IGBT High Speed IGBT for 20-50kHz Switching Advance Technical Information IXYH40N120C4 VCES = 1200V IC110 = 40A V CE(sat) 

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IGBT Features  1200V,40A  VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L NVH4L040N120M3S Features • Typ. RDS(on) = 40 mW

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Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L NVBG040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate C

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed fo

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FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6

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High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat)

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1200V XPTTM IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXYH40N120B3 VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 40A 2.9V 1

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L NTHL040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gat

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1200V XPTTM IGBT GenX3TM IXYH40N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ T

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Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, Bare Die NVC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology t

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