40N120 Datasheet | Specifications & PDF Download

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov

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Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N120R3 Data sheet Industrial Power Control IHW40N120R3 Resonant Swi

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SEMICONDUCTOR TECHNICAL DATA KGF40N120KDA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and sh

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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IKW40N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast r

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NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi

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NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov

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NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren

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IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C

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IGBT - Ultra Field Stop NGTB40N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench co

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

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http://www.fujielectric.com/products/semiconductor/ FGW40N120W Discrete IGBT (High-Speed W series) 1200V / 40A Features Low power loss Low switching

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IGBT - Field Stop II NGTB40N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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  VCES = 1200V IC = 40A, TC =100°C IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC

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Preliminary Technical Information GenX3TM 1200V IGBT IXGH40N120C3 High speed PT IGBTs for 20 - 50 kHz switching VCES = IC110 = VCE(sat) ≤ tfi(typ)

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