40N120 Datasheet | Specifications & PDF Download

Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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SCTWA40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features

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IKW40N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast r

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching

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NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren

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SCTW40N120G2VAG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package Features Order code SCTW40N120G

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UNISONIC TECHNOLOGIES CO., LTD UPG40N120 Insulated Gate Bipolar Transistor 1200V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UPG40N120 is a N-chann

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NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov

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NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov

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SCTW40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package HiP247 3 2 1 D(2, TAB) Features Order code VD

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

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1200V XPTTM IGBT GenX4TM Ultra Low-Vsat IGBT for up to 5kHz Switching IXYX140N120A4 VCES = 1200V IC110 = 140A V  1.70V CE(sat) tfi(typ) = 320ns

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MOSFETs Silicon Carbide N-Channel MOS TW140N120C TW140N120C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd genera

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IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW40N120H3 1200V high speed switching ser

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1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IICF19100 ICM IA EAS SSOA

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FGL40N120AND 1200V NPT IGBT February 2008 FGL40N120AND 1200V NPT IGBT tm Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6

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IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C

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IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C

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IKW40N120T2 TrenchStop® 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter C

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