IGBT with Reverse Blocking capability IXRH 40N120.
UTC
UTG40N120FQ-S - 1200V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG40N120FQ.
Infineon
IHW40N120R3 - IGBT
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N120R3 Data sheet Industrial Power Control IHW40N120R3 Resonant Swi.
ON Semiconductor
NVH4L040N120SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low.
ON Semiconductor
40N120FL2 - IGBT
NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Tren.
IXYS Corporation
40N120 - IXEH40N120
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C.
ON Semiconductor
40N120IHL - IGBT
NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.
ON Semiconductor
40N120 - IGBT
NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and prov.
ON Semiconductor
NVH4L040N120M3S - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L NVH4L040N120M3S Features • Typ. RDS(on) = 40 mW .
ON Semiconductor
NGTB40N120FL2WG - IGBT
IGBT - Field Stop II NGTB40N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct.
ON Semiconductor
NGTB40N120IHLWG - IGBT
NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
Taiwan Semiconductor
G40N120CE - TSG40N120CE
TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter TSG40N120CE N-Channel IGBT with FRD. PRODUCT SUMMARY VCES (V) VGES (V) 1200 ±20 IC (A) .
Infineon
K40H1203 - IKW40N120H3
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching .
ON Semiconductor
NGTB40N120IHRWG - IGBT
NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.
STMicroelectronics
SCTH40N120G2V7AG - Automotive-grade silicon carbide Power MOSFET
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) .
ON Semiconductor
NVC040N120SC1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, Bare Die NVC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology t.
STMicroelectronics
SCTH40N120G2V-7 - Silicon carbide Power MOSFET
SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Features Order code VDS RDS.
ON Semiconductor
NTBG040N120SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60.
Infineon
IKW40N120H3 - IGBT
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching .
IXYS
IXYH40N120B3D1 - IGBT
1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200.
IXYS
IXYH40N120C3D1 - IGBT
1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IICF19100 ICM IA EAS SSOA .