4407 Datasheet | Specifications & PDF Download

AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate cha

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4407 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Ma

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Freescale AO4407/MC4407A P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

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P-Channel Enhancement Mode Power MOSFET Description The PE4407A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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MX4407 P-Channel Enhancement Mode Power MOSFET Description The MX4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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CRMQBL4407A P-Channel -30V, 7.5mΩ Typ. Power MOSFET Description Features l -30V, -42A D RDS(ON) Typ = 7.5mΩ @ VGS = -10V RDS(ON) Typ = 13.5mΩ @ VG

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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AO4407A AO4407A Datasheet www.VBsemi.com P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at

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AO4407C 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free

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AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate cha

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FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4407A uses advanced trench technology to provide excellent RDS(ON), This device is suit

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FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4407 uses advanced trench technology to provide excellent RDS(ON), This device is suita

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Ordering number : ENN8397 EC4407KF EC4407KF Features • Low ON-resistance. • 1.8V drive. • mounting height : 0.4mm. N-Channel Silicon MOSFET General

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/20 REVISED DATE : GSC4407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID

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AO4407 AO4407 Datasheet www.VBsemi.com P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at VG

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Ordering number:EN2760 NPN Epitaxial Planar Silicon Transistor 2SC4407 VHF/UHF Mixer, Local Oscillator Applications Applications · VHF/UHF mixers, f

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TGC4407-SM ® Ka - Band Upconverter Product Description The QORVO TGC4407-SM is a Ka-Band sub-harmonic upconverter with integrated LO buffer amplifier

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Analog Power P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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Features  P-Channel，-5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  100% Avalanche test  Pb-free lead plating;

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