441 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1441 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(

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INMP441 Omnidirectional Microphone with Bottom Port and I2S Digital Output GENERAL DESCRIPTION The INMP441 is a high-performance, low power, digital-

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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RF-500TB OUTPUT : 0.01W~2.0W (APPROX) Precious metal-brush motors WEIGHT : 45g (APPROX) Typical Applications Audio and Visual Equipment : CD Player

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FEATURES n Very Low Loss Replacement for Power Supply OR’ing Diodes n Minimal External Components n Automatic Switching Between DC Sources n Simplifie

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WS3441 ProductDescription Features  Critical Conduction Mode Operation  Internal 500V Power MOSFET  No Auxiliary Winding  Ultra Low Operating Curr

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PA441/PA443 High Voltage Power Operational Amplifier RoHS COMPLIANT FEATURES • RoHS Compliant • Monolithic MOS Technology • Low Cost • High Voltage

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2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VC

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P-Channel 30-V (D-S) MOSFET DTM4417 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.0095 at VGS = - 10 V 0.0125 at VGS = - 4.5 V ID

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Shenzhen Tuofeng Semiconductor Technology co., LTD N-Channel Enhancement-Mode MOSFET (30V, 10A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30V

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DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD441000L-

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Ordering number:EN3444 Features · Low ON-state resistance. · Ultrahigh-speed switching. N-Channel Silicon MOSFET 2SK1441 Ultrahigh-Speed Switching Ap

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FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 10 A, 3

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PE4419 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m

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LAB MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad. SEME 2N3441 MEDIUM PO

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