4N40 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N40 ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-

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SEMICONDUCTOR TECHNICAL DATA KMB054N40DA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switchin

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PHOTO SCR OPTOCOUPLERS DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon

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SEMICONDUCTOR TECHNICAL DATA KMB054N40DC N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switchin

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FDP24N40 / FDPF24N40 N-Channel MOSFET www.DataSheet4U.com December 2007 FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features • RDS(on)

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HGTP14N40F3VL April 1995 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Fea

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UNISONIC TECHNOLOGIES CO., LTD 4N40 4A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advance

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VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85×103 0.8 0.086 V A A A V mΩ Rectifier Diode 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec.

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5 1 6(5,(6 LOW NOISE 150mA LDO REGULATOR NO. EA-095-0209 OUTLINE 7KH 5 1 6HULHV DUH &026 EDVHG YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH

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Silicon N-Channel Power MOSFET CS24N40F A9H ○R General Description： CS24N40F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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R1114N Series Low Noise 150 mA LDO Regulator for Automotive Applications NO.EC-094-131219 OUTLINE The R1114x Series are CMOS-based voltage regulator I

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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HGTP14N40F3VL / HGT1S14N40F3VLS January 2002 HGTP14N40F3VL / HGT1S14N40F3VLS 330mJ, 400V, N-Channel Ignition IGBT General Description This N-Channel

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high volt

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW24N40E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat

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R1114N Series Low Noise 150 mA LDO Regulator for Automotive Applications NO.EC-094-131219 OUTLINE The R1114x Series are CMOS-based voltage regulator I

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5 1 6(5,(6 LOW NOISE 150mA LDO REGULATOR NO. EA-095-0209 OUTLINE 7KH 5 1 6HULHV DUH &026 EDVHG YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH

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SEMICONDUCTOR TECHNICAL DATA KMB054N40IA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switchi

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