50-inch Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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isc Thyristors BT151-500R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,moto

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isc Thyristors INCHANGE Semiconductor CLA50E1200HB DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar pas

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508DX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ I

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW20NM50FD ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100%

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N50 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Volta

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N20 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Vol

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isc N-Channel MOSFET Transistor IXTC13N50 ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 400mΩ@VG

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iscN-Channel MOSFET Transistor IRFP150 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBRF20150 FEATURES ·Low power loss, high efficiency. ·Multilayer Metal -Sili

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isc Silicon PNP Power Transistor MJE15033 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·DC current gain - : hFE = 50 (

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :

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