3DD5024
Inchange Semiconductor
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Silicon npn power transistor.
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3DD5023 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
3DD5023
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.
/ Features
、;,,。 High br.
3DD5023 - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
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µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY
3DD5023
Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ;
z ²ÊÉ«µçÊÓ»úÐ.
3DD5023P - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO)
R CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY
3DD5023P
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500 V 6A 5 V(max) 1 μs(max.
3DD5024 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
3DD5024
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.
/ Features
、;,,。 High br.
3DD5024 - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION
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3DD5024(P)
BVCBO IC VCE(sat) tf
MAIN CHARACTERISTICS
1500V 8.0 A 3.0V(m.
3DD5024A - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
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µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY
3DD5024A
Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ;
z ²ÊÉ«µçÊÓ».
3DD5024P - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO)
CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION
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3DD5024P
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500V 8.0 A 3.0V(max).
3DD5027 - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5027
IC VCEO PC(TO-220)
MAIN CHARACTERISTICS
3A 800V 50W
Package
z z z z z
AP.
3DD5027A - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5027A
IC VCEO PC(TO-220)
MAIN CHARACTERISTICS
2.0A 550V 30W
Package
z z z z z
.
3DD5011 - CASE-RATED BIPOLAR TRANSISTOR
(JILIN SINO-MICROELECTRONICS)
CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION
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3DD5011
MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
900V 10 A 0.5 V(max) 0..