50N06-Q Datasheet | Specifications & PDF Download

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avala

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N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extr

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate

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FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

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RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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www.DataSheet4U.com STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V

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HM50N06D N-Channel Enhancement Mode Power MOSFET Description The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) wit

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low

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CMD50N06/CMU50N06 N-Channel 60V MOSFET General Description The 50N06 combines advanced trench MOSFET technology with a low resistance package to pro

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMO

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MOSFET – Power, N-Channel 60 V, 50 A, 22 mW RFP50N06 These N−Channel power MOSFETs are manufactured using the MegaFET process. This process, which u

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Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w

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YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ●

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic

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CS50N06 N MOSFT Description CS50N06 N MOSFET。 ，， 。、 PWM 、 。 Features ·VDSS =60V ·ID =50A ·RDS(ON)＜10mΩ (VGS=10V) CS50N06 TO-220 1.Gate 2.Drain 3.

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OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t

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www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc

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50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, prov

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KIA 50 Amps, 60 Volts N-CHANNEL MOSFET ：13641469108 QQ:543158798 50N06 SEMICONDUCTORS 1.Description The KIA50N06 is three-terminal silicon device

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