UNISONIC TECHNOLOGIES CO., LTD 50N06-Q Prelimina.
CHONGQING PINGYANG
50N06 - N-CHANNEL MOSFET
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avala.
CET
CEP50N06 - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low .
Analog Power
AM50N06-20D - N-Channel MOSFET
Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
Chinahaiso electronic
GFP50N06 - MOSFET
Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typic.
Silan Microelectronics
SVD50N06MJ - MOSFET
SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi.
Fairchild Semiconductor
FQP50N06 - 60V N-Channel MOSFET
FQP50N06 QFET FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa.
Motorola
MTP50N06VL - N-Channel Power FET
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technolog.
UTC
50N06 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with.
DnI
DFP50N06 - N-Channel MOSFET
www.DataSheet4U.com DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedn.
Sammwin
SW50N06 - N-Channel MOSFET
www.DataSheet4U.com SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc .
Sirectifier Semiconductors
SG50N06T - Discrete IGBTs
SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 1.
HOMSEMI
HS50N06DA - N-channel 60V MOSFET
N channel 60V MOSFET HS50N06DA 1. Description The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced usin.
Analog Power
AM50N06-15D - N-Channel MOSFET
Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power lo.
Infineon
IPP050N06N - Power-Transistor
OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
SeCoS
SPR50N06-C - N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente SPR50N06-C 50A, 60V, RDS(ON) 12mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.
ChipSourceTek
MOT50N06C - N-CHANNEL MOSFET
MOT50N06C/MOT50N06D N-CHANNEL MOSFET MOT50N06C/D PRODUCT CHARACTERISTICS VDSS RDS(on)Typ(@V GS=10 V) ID 60V 13mΩ 50A MOT50N06C/D Pin Configura.
CHONGQING PINGYANG
50N06H - N-CHANNEL MOSFET
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% aval.
CHONGQING PINGYANG
50N06F - N-CHANNEL MOSFET
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% aval.
Cmos
CMD50N06 - N-Channel 60V MOSFET
CMD50N06/CMU50N06 N-Channel 60V MOSFET General Description The 50N06 combines advanced trench MOSFET technology with a low resistance package to pro.
Silan Microelectronics
SVD50N06T - MOSFET
SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi.