50P06 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P06 -50A, -60V P-CHANNEL (D-S) POWER MOSFET „ DESCRIPTION Power MOSFET The UTC UTT50P06 is a P-chann

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www.vishay.com SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 °C MOSFET DPAK (TO-252) Drain connected to tab FEATURES • TrenchFET® power

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TS50P05G – TS50P07G Taiwan Semiconductor 50A, 600V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip

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Analog Power AM50P06-15D P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Ty

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NP50P06SDG -60V – -50A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1511EJ0100 Rev.1.00 Jun. 03, 2022 Description This product

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS

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VBZE50P06 P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID (A) - 50 - 45 TO

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE

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+03 . P-Channel Enhancement Mode Power MOSFET Description The +03 . uses advanced trench technology and design to provide excellent RDS(ON) wit

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+03 P-Channel Enhancement Mode Power MOSFET Description The +03 uses advanced trench technology and design to provide excellent RDS(ON) with

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BR50P06 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220 P MOS 。P-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on)，，Crss ，。 Low

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BRD50P06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 P MOS 。P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on)，，Crss ，。 Low

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NP50P06KDG -60V – -50A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1526EJ0100 Rev.1.00 Jun. 24, 2022 Description This product

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Isc P-Channel MOSFET Transistor ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanch

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06SDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06SDG is P-channel MOS Field Effect Transist

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www.vishay.com SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET TO-252 Drain connected to tab FEATURES • TrenchFET® power MOSFET • Materia

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plati

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SUD50P06-15L-GE3 SUD50P06-15L-GE3 Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VG

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isc P-Channel MOSFET Transistor FQD50P06 FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-

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SUD50P06-15-GE3 P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID (A) - 50 - 4

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