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NP50P06SDG - MOS FIELD EFFECT TRANSISTOR

NEC

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Datasheet Details

Part number	NP50P06SDG
Manufacturer	NEC
File Size	235.80 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP50P06SDG-NEC.pdf

NP50P06SDG Product details

Description

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =.
10 V, ID =.
25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =.
4.5 V, ID =.
25 A).
Low input capacitance Ciss = 5000 pF TYP. (TO-252).

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Published: Aug 19, 2015 |