Part number:
NP50P06SDG
Manufacturer:
NEC
File Size:
235.80 KB
Description:
Mos field effect transistor.
Datasheet Details
Part number:
NP50P06SDG
Manufacturer:
NEC
File Size:
235.80 KB
Description:
Mos field effect transistor.
NP50P06SDG, MOS FIELD EFFECT TRANSISTOR
The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external e
NP50P06SDG Features
* Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =
* 10 V, ID =
* 25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =
* 4.5 V, ID =
* 25 A)
* Low input capacitance Ciss = 5000 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Volta
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