Part number:
NP50P06SDG
Manufacturer:
NEC
File Size:
235.80 KB
Description:
Mos field effect transistor.
* Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =
* 10 V, ID =
* 25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =
* 4.5 V, ID =
* 25 A)
* Low input capacitance Ciss = 5000 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Volta
NP50P06SDG Datasheet (235.80 KB)
NP50P06SDG
NEC
235.80 KB
Mos field effect transistor.
📁 Related Datasheet
NP50P06SDG P-channel Power MOSFET (Renesas)
NP50P06KDG MOSFET (NEC)
NP50P06KDG P-channel Power MOSFET (Renesas)
NP50P03YDG MOS FIELD EFFECT TRANSISTOR (Renesas)
NP50P04KDG MOS FIELD EFFECT TRANSISTOR (NEC)
NP50P04SLG P-Channel Power MOSFET (Renesas)
NP5002 Press Fit Auto Rectifier (Naina Semiconductor)
NP5002R Press Fit Auto Rectifier (Naina Semiconductor)
NP5004 Press Fit Auto Rectifier (Naina Semiconductor)
NP5004R Press Fit Auto Rectifier (Naina Semiconductor)