NP50P06SDG Datasheet - NEC

NP50P06SDG MOS FIELD EFFECT TRANSISTOR

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external e.

NP50P06SDG Features

* Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =

* 10 V, ID =

* 25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =

* 4.5 V, ID =

* 25 A)

* Low input capacitance Ciss = 5000 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Volta

NP50P06SDG Datasheet (235.80 KB)