NP50P06SDG MOS FIELD EFFECT TRANSISTOR

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06SDG SWITCHING P-CHANNEL POWER MOSFET .
The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number: NP50P06SDG
Manufacturer: NEC
File Size: 235.80 KB
Datasheet: NP50P06SDG-NEC.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =
* 10 V, ID =
* 25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =
* 4.5 V, ID =
* 25 A)
* Low input capacitance Ciss = 5000 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Volta

NP50P06SDG Distributors

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NP50P06SDG MOS FIELD EFFECT TRANSISTOR NEC

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