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NP50P04KDG

MOS FIELD EFFECT TRANSISTOR

NP50P04KDG Features

* Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS =

* 10 V, ID =

* 25 A) RDS(on)2 = 15 mΩ MAX. (VGS =

* 4.5 V, ID =

* 25 A)

* Low input capacitance Ciss = 5100 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0

NP50P04KDG General Description

The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY NP50P04KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does .

NP50P04KDG Datasheet (201.24 KB)

Preview of NP50P04KDG PDF

Datasheet Details

Part number:

NP50P04KDG

Manufacturer:

NEC

File Size:

201.24 KB

Description:

Mos field effect transistor.

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NP50P04KDG MOS FIELD EFFECT TRANSISTOR NEC

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