NP50P04KDG Datasheet (NEC) - MOS FIELD EFFECT TRANSISTOR

NP50P04KDG, MOS FIELD EFFECT TRANSISTOR

The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY NP50P04KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does

NP50P04KDG Features

* Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS =

* 10 V, ID =

* 25 A) RDS(on)2 = 15 mΩ MAX. (VGS =

* 4.5 V, ID =

* 25 A)

* Low input capacitance Ciss = 5100 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0