* Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A )
* Low input capacitance : Ciss = 3800 pF Typ.
* Built-in gate protection diode
* Designed for automotive application and AEC-Q101 qualified.
* Pb-
NP50P04SLG Datasheet (1.38 MB)
NP50P04SLG
1.38 MB
P-channel power mosfet.
NP50P04SLG
-40V
* -50A
* P-channel Power MOS FET Application : Automotive
Datasheet
R07DS0241EJ0101 Rev.1.01
May. 20, 2022
Descripti.
📁 Related Datasheet
NP50P04KDG MOS FIELD EFFECT TRANSISTOR (NEC)
NP50P03YDG MOS FIELD EFFECT TRANSISTOR (Renesas)
NP50P06KDG MOSFET (NEC)
NP50P06KDG P-channel Power MOSFET (Renesas)
NP50P06SDG MOS FIELD EFFECT TRANSISTOR (NEC)
NP50P06SDG P-channel Power MOSFET (Renesas)
NP5002 Press Fit Auto Rectifier (Naina Semiconductor)
NP5002R Press Fit Auto Rectifier (Naina Semiconductor)
NP5004 Press Fit Auto Rectifier (Naina Semiconductor)
NP5004R Press Fit Auto Rectifier (Naina Semiconductor)
