NP55N03SUG

MOS FIELD EFFECT TRANSISTOR

Renesas

NP55N03SUG Features

* Channel temperature 175 degree rated

* Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)

* Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Volta

NP55N03SUG General Description

The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP55N03SUG-E1-AY Note NP55N03SUG-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel Note Pb-free (This product does not contain Pb in externa.

NP55N03SUG Datasheet (248.98 KB)