NP55N03SUG Datasheet, Transistor, Renesas

NP55N03SUG Features

• Transistor
• Channel temperature 175 degree rated
• Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low input capacitance Ciss = 3500 pF TYP. (VDS =

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NP55N03SUG

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Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART

NP55N03SUG Application

• Applications ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP55N03SUG-E1-AY Note NP55N03SUG-E2-AY Note Pure Sn (Tin) Tape 2500 p/ree

TAGS

NP55N03SUG

Renesas

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