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NP55N055SDG - MOS FIELD EFFECT TRANSISTOR

Renesas

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Datasheet Details

Part number	NP55N055SDG
Manufacturer	Renesas ↗
File Size	195.42 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP55N055SDG-Renesas.pdf

NP55N055SDG Product details

Description

The NP55N055SDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Channel temperature 175 degree rating.
Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A).
Low Ciss: Ciss = 3200 pF TYP.
Logic level drive type (TO-252).

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Published: Aug 18, 2015 |