NP55N055SDG

MOS FIELD EFFECT TRANSISTOR

Renesas

* Channel temperature 175 degree rating

* Super low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 28 A)

* Low Ciss: Ciss = 3200 pF TYP.

* Logic level drive type (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS

NP55N055SDG

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Mos field effect transistor.

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NP55N055SDG MOS FIELD EFFECT TRANSISTOR Renesas

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