NP50P03YDG

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS =

* 10 V, ID =

* 25 A)

* Low Ciss: Ciss = 2300 pF TYP. (VDS =

* 25 V, VGS = 0 V)

* Designed for automotive application and AEC-Q101 qualified

* Small size package 8-pin HSON Ordering Informat

NP50P03YDG

224.06 KB

Mos field effect transistor.

📁 Related Datasheet

NP50P04KDG MOS FIELD EFFECT TRANSISTOR (NEC)

NP50P04SLG P-Channel Power MOSFET (Renesas)

NP50P06KDG MOSFET (NEC)

NP50P06KDG P-channel Power MOSFET (Renesas)

NP50P06SDG MOS FIELD EFFECT TRANSISTOR (NEC)

NP50P06SDG P-channel Power MOSFET (Renesas)

NP5002 Press Fit Auto Rectifier (Naina Semiconductor)

NP5002R Press Fit Auto Rectifier (Naina Semiconductor)

NP5004 Press Fit Auto Rectifier (Naina Semiconductor)

NP5004R Press Fit Auto Rectifier (Naina Semiconductor)

TAGS

NP50P03YDG MOS FIELD EFFECT TRANSISTOR Renesas

Image Gallery