NP50P03YDG MOS FIELD EFFECT TRANSISTOR

Renesas

Description

NP50P03YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0019EJ0200 Rev.2.00 Mar 16, 2011 .
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance ⎯.

📥 Download Datasheet

NP50P03YDG Datasheet Preview — Preview of NP50P03YDG PDF

Datasheet Specifications

Part number: NP50P03YDG
Manufacturer: Renesas ↗
File Size: 224.06 KB
Datasheet: NP50P03YDG-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS =
* 10 V, ID =
* 25 A)
* Low Ciss: Ciss = 2300 pF TYP. (VDS =
* 25 V, VGS = 0 V)

NP50P03YDG Distributors

📁 Related Datasheet

NP50P04KDG NP50P06KDG NP50P06SDG NP5002 NP5002R NP5004

📌 All Tags

NP50P03YDG MOS FIELD EFFECT TRANSISTOR Renesas

Renesas NP50P03YDG-like datasheet