NP50P03YDG Datasheet, Transistor, Renesas

NP50P03YDG Features

• Transistor
• Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS =
• 10 V, ID =
• 25 A)
• Low Ciss: Ciss = 2300 pF TYP. (VDS =
• 25 V, VGS = 0 V)
• De

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Part number:

NP50P03YDG

Manufacturer:

Renesas ↗

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224.06kb

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📄 Datasheet

Description:

Mos field effect transistor. The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features

Low on-s

NP50P03YDG Application

• Applications Features
• Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS =
• 10 V, ID =
• 25 A)
• Low Ciss: Ciss

TAGS

NP50P03YDG

Renesas

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