NP55N04SLG MOS FIELD EFFECT TRANSISTOR

Renesas

Description

NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 .
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Channel temperature 175 d.

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Datasheet Specifications

Part number: NP55N04SLG
Manufacturer: Renesas ↗
File Size: 242.99 KB
Datasheet: NP55N04SLG-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Channel temperature 175 degree rating
* Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)
* Low input capacitance
* Gate to Source ESD prote

NP55N04SLG Distributors

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NP55N04SLG MOS FIELD EFFECT TRANSISTOR Renesas

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