NP55N04SLG Datasheet, Transistor, Renesas

NP55N04SLG Features

• Transistor
• Channel temperature 175 degree rating
• Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)

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Part number:

NP55N04SLG

Manufacturer:

Renesas ↗

File Size:

242.99kb

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📄 Datasheet

Description:

Mos field effect transistor. The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features

Channel

NP55N04SLG Application

• Applications Features
• Channel temperature 175 degree rating
• Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V,

TAGS

NP55N04SLG

Renesas

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