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NP55N04SLG

MOS FIELD EFFECT TRANSISTOR

NP55N04SLG Features

* Channel temperature 175 degree rating

* Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)

* Low input capacitance

* Gate to Source ESD prote

NP55N04SLG Datasheet (242.99 KB)

Preview of NP55N04SLG PDF

Datasheet Details

Part number:

NP55N04SLG

Manufacturer:

Renesas ↗

File Size:

242.99 KB

Description:

Mos field effect transistor.

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NP55N04SLG MOS FIELD EFFECT TRANSISTOR Renesas

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