HY29F400BT55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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HY29F400TG55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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L29S800F (ETC)
8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY
LinkSmart
Rev. No. Approved date A July 17 2002
L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY
PRELIMINARY
A
Revision history
History I
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S29AL004D (SPANSION)
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
ADVANCE INFORMATION
Notice to Readers: The Advance Inf
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HY29F400TR45 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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27C040 (ATMEL)
4-Megabit 512K x 8 OTP EPROM
AT27C040
Features
• Fast Read Access Time - 70 ns • Low Power CMOS Operation •
100 µA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages
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UT9Q512K32E (Aeroflex Circuit Technology)
16 Megabit RadTolerant SRAM MCM
Standard Products
UT9Q512K32E 16 Megabit RadTolerant SRAM MCM
Data Sheet June 28, 2011
FEATURES 25ns maximum (5 volt supply) address access time
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HY29F400BT90 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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7 views
HY29F400TR55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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7 views
29F040 (Advanced Micro Devices)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
PRELIMINARY
Am29F040B
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Distinctive Characteristics
s 5.0 V ± 10% for read an
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UT9Q512K32 (AEROFLEX)
16Megabit SRAM MCM
www.DataSheet4U.com
Standard Products
QCOTSTM UT9Q512K32 16Megabit SRAM MCM
Data Sheet June, 2003
FEATURES q 25ns maximum (5 volt supply) address a
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AT49LV040 (ATMEL Corporation)
4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Tim
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AT49LV040T (ATMEL)
4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Tim
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AT29C040A (ATMEL Corporation)
4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
Features
• • • • • • • • • • • •
Fast Read Access Time - 100 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and
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HY29F400BR55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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6 views
HY29F400TG90 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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6 views
HY29F400TR90 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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6 views
HY29F400TT55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
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AM29LV2562M (SPANSION)
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
Am29LV2562M
Data Sheet
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fu
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AT49F008A (Atmel)
(AT49F008A / AT49F8192A) 8-megabit (1M x 8 / 512K x 16) Flash Memory
Features
• Single-voltage Operation • • •
– 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture
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