AM29LV104B (AMD)
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector 32-Pin Flash Memory
(65 views)
EN35SXR512A (EON)
512 Megabit 1.8V Serial Flash Memory
EN35SXR512A (2PC)
EN35SXR512A (2PC) 512 Megabit 1.8V Serial
Flash
Memory
with
4Kbyte
UniformprSeelicmtoinrary
FEATURES
Single power supply op
(43 views)
AT49LV8011 (ATMEL)
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
www.DataSheet4U.com
Features
• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu
(42 views)
AT28C040 (ATMEL Corporation)
4-Megabit (512K x 8) Paged Parallel EEPROM
Features
• Read Access Time – 200 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas
(41 views)
AT49LV8192A (ATMEL)
8-megabit (1M x 8/512K x 16) Flash Memory
Features
• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control
(40 views)
AT49F8192A (Atmel)
(AT49F008A / AT49F8192A) 8-megabit (1M x 8 / 512K x 16) Flash Memory
Features
• Single-voltage Operation • • •
– 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture
(40 views)
29C040 (ATMEL)
4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
Features
• • • • • • • • • • • •
Fast Read Access Time - 100 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and
(38 views)
AT49BV8192A (ATMEL)
8-megabit (1M x 8/512K x 16) Flash Memory
Features
• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control
(35 views)
AT27C040 (ATMEL Corporation)
4-Megabit 512K x 8 OTP EPROM
AT27C040
Features
• Fast Read Access Time - 70 ns • Low Power CMOS Operation •
100 µA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages
(33 views)
EN29LV800 (Eon Silicon Solution)
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV800
EN29LV800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power suppl
(32 views)
AT49BV802AT (ATMEL Corporation)
8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
www.DataSheet4U.com
Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • •
– Fifteen 3
(32 views)
AM29F400B (AMD)
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DATA SHEET
Am29F400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power
(31 views)
AM29LV040B (AMD)
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only/ Uniform Sector 32-Pin Flash Memory
ADVANCE INFORMATION
Am29LV040B
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single
(31 views)
AT49BV8011 (ATMEL)
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
www.DataSheet4U.com
Features
• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu
(31 views)
AT29BV040A (ATMEL Corporation)
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV040A
Features
• • • • • • • • • • • • •
Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programm
(30 views)
EN29F040 (ETC)
4 Megabit (512K x 8-bit) Flash Memory
EN29F040
EN29F040 4 Megabit (512K x 8-bit) Flash Memory
FEATURES
• 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55n
(30 views)
29F040 (Advanced Micro Devices)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
PRELIMINARY
Am29F040B
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Distinctive Characteristics
s 5.0 V ± 10% for read an
(30 views)
AT49LV8011T (ATMEL)
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
www.DataSheet4U.com
Features
• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu
(29 views)
AT49LV040T (ATMEL)
4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Features
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Tim
(28 views)
AT49LV8192T (ATMEL)
8-Megabit (512K x 16) CMOS Flash Memory
Features
• Low Voltage Operation – 2.7V Read
– 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architectur
(28 views)