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512M-BIT Datasheet

512M-BIT

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Infineon

HYB25L512160AC-7.5 - 512MBit Mobile-RAM

 · 12 Hits ......7 1.2...
Infineon

HYB25D512400BE - 512Mbit Double Data Rate SDRAM

 · 11 Hits ......9 Desc...
Hynix Semiconductor

H5MS5122DFR - Mobile DDR SDRAM 512Mbit

 · 10 Hits SUMMARY ● Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle ● Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplex...
Winbond

W25N512GVBIG - 3V 512M-BIT SERIAL SLC NAND FLASH MEMORY

 · 10 Hits .... 6 3. PACKAGE TY...
Winbond

W25N512GVFIT - 3V 512M-BIT SERIAL SLC NAND FLASH MEMORY

 · 10 Hits .... 6 3. PACKAGE TY...
Kingston

KVR13N9S8-4 - 4GB 1Rx8 512M x 64-Bit PC3-10600 CL9 240-Pin DIMM

 · 9 Hits • • • • • • • • • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal...
Winbond

W25N512GVBIT - 3V 512M-BIT SERIAL SLC NAND FLASH MEMORY

 · 9 Hits .... 6 3. PACKAGE TY...
Sony Corporation

CXK58512M - 65536-word X 8-bit High Speed CMOS Static RAM

 · 7 Hits • Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current 10µA (Max.) • Low data retention current...
Hynix Semiconductor

HY27UF084G2B - 4Gbit (512Mx8bit) NAND Flash

 · 7 Hits SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two in...
Elite Semiconductor

F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

 · 7 Hits  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell ...
Alliance Semiconductor

AS4C32M16SA - 512Mbit Single-Data-Rate (SDR) SDRAM

 · 7 Hits ...
Hynix Semiconductor

HY5S7B6LF-H - 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

 · 6 Hits ● ● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERA...
Toshiba

TC58NVG2S3ETA00 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

 · 6 Hits • Organization Memory cell array Register Page size Block size • x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Pag...
Hynix Semiconductor

H55S5122EFR-A3M - 512Mbit (16Mx32bit) Mobile SDR Memory

 · 6 Hits ● ● ● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OP...
Microchip

dsPIC33EP512MC504 - 16-Bit Microcontrollers and Digital Signal Controllers

 · 6 Hits • ADC module: - Configurable as 10-bit, 1.1 Msps with four S&H or 12-bit, 500 ksps with one S&H - Six analog inputs on 28-pin devices and up to 16 ana...
Elpida Memory

HM5257405B-A6 - 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM

 · 5 Hits • • • • • • • • 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and ind...
Toshiba

TC58DVM92A5TAI0 - 512M-BIT (64M x 8 BITS) CMOS NAND E2PROM

 · 5 Hits • Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes • Modes Read, Reset, Auto P...
Infineon Technologies Corporation

HYB25DC512800C - (HYB25DC512160C / HYB25DC512800C) 512M-Bit DDR SDRAM

 · 5 Hits ......8 Desc...
Hynix Semiconductor

HY5S7B2LFP-H - 512M (16Mx32bit) Mobile SDRAM

 · 5 Hits ...
Toshiba

TC58BVG2S0HBAI4 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

 · 5 Hits • Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 4224 × 8 4224 bytes (256K + 8K) bytes • Modes Read, Reset, Auto Pa...
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