5551 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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MMBT5551T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features , MMBT5401T 。

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NPN Silicon Epitaxial Planar Transistor FEATURES z Switching and amplification in high voltage. z Low current(max. 600mA) z High voltage (max. 180V)

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbo

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DATA SHEET www.onsemi.com High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features  S and NSV Prefix for Automotive and Other Application

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High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN COMPLEMENTARY SILICON HIGH VOLT

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Dual-Chip NPN General-Purpose Amplifier NSVT5551DW1 Features • This Device is Designed for General−purpose High Voltage Amplifier • Simplifies Circui

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MMBT5551W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features , MMBT5401W

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DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 50 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5

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PH5551A2NA1-E4 Ambient Illuminance Sensor Preliminary Data Sheet R08DS0037EJ0100 Rev.1.00 Aug 03, 2011 DESCRIPTION The PH5551A2NA1-E4 is a digital a

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Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product complian

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Features ■ Ideal for medium power amplification and switching ■ Complementary PNP MMBT5401 Applications ■ General Purpose Amplifier ■ Switching Absol

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ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 2W Complementary part number ZXTP5401G Desc

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LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix

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SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) Formosa MS FEATURES z Complementary to MMBT5401 z Ideal for medium power amplificat

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www.DataSheet4U.com CORPORATION G2N5551 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B

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