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NSVT5551DW1 Dual-Chip NPN General-Purpose Amplifier

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Description

Dual-Chip NPN General-Purpose Amplifier NSVT5551DW1 .

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Features

* This Device is Designed for General
* purpose High Voltage Amplifier
* Simplifies Circuit Design
* Reduces Board Space
* Reduces Component Count
* Available in 8 mm, 7
* inch/3,000 Unit Tape and Reel
* AEC
* Q101 Qualified and PPAP

Applications

* involving pulsed or low duty
* cycle operations. THERMAL CHARACTERISTICS (Note 3) (TA = 25°C unless otherwise noted) Characteristic Symbol Max Unit Total Device Dissipation Derate Above 25°C PD 200 mW 1.6 mW/°C Thermal Resistance, Junction
* to
* Ambient RqJA 625 °C/

NSVT5551DW1 Distributors

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