55N Datasheet | Specifications & PDF Download

NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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Public ISC055N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) •

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1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYT55N120A4HV VCES = 1200V IC110 = 55A V  1.8V CE(sat) tfi(typ) = 270n

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55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/

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BGA855N6 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Features • Operating frequencies: 1164 - 1300 MHz • Insertion power gain:

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GenX3TM 1200V IGBTs w/ Diode Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC

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MOSFET – Power, Single N-Channel, SO8-FL 30 V, 462 A, 0.58 mW NTMFS0D55N03CG Features  Wide SOA to Improve Inrush Current Management  Advanced Pack

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APM3055NG-VB APM3055NG-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.018 a

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GenX3TM 1200V IGBTs w/ Diode Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA)

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA)

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SKD502T, SKSS055N08N SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Ex

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() CRSD055N08N3 SkyMOS3 N-MOSFET 80V, 4.6mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(on) • Excelle

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AM2355N Motor Driver ICs 3-phase Sensor-less Fan Motor Driver AM2355N The AM2355N is a 3-phase sensor-less DC fan motor driver IC. It senses the BEM

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() CRST055N07N,CRSS053N07N SkyMOS1 N-MOSFET 70V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o

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1200V XPTTM GenX4TM IGBT IXYH55N120A4 Ultra Low-Vsat PT IGBT for up to 5kHz Switching VCES = 1200V IC110 = 55A V  1.8V CE(sat) tfi(typ) = 270ns

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Volt

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FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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() CRST055N08N, CRSS052N08N SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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