55N Datasheet | Specifications & PDF Download

NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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www.DataSheet.in STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST P55NE06 ST P55NE06FP s s s s s s V

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55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/

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() CRST055N07N,CRSS053N07N SkyMOS1 N-MOSFET 70V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o

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CMOS GENERAL PURPOSE TIMER FEATURES  Exact equivalent in most cases for SE/NE555  Low Supply Current  High speed operation – 500KHz guaranteed  Wi

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FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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() CRST055N08N, CRSS052N08N SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 R

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Reflective Object Sensor OPB750N, OPB750T OPB755NZ, OPB755TZ, OPB755TAZ Features: • High contrast ratio (1,000 :1 minimum) • Low cost plastic housing

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STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — producti

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Silicon N-Channel Power MOSFET ○R CS55N10 A4 General Description： CS55N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — producti

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LM555/NE555/SA555 Single Timer www.fairchildsemi.com Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit

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MOSFET - Power, Single N-Channel SuperFET) V, FRFET), D2PAK 600 V, 55 mW, 45 A NVB055N60S5F Description The SUPERFET V MOSFET FRFET series has optimi

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FDP55N06 / FDPF55N06 — N-Channel UniFETTM MOSFET October 2013 FDP55N06 / FDPF55N06 60 V, 55 A, 22 mΩ Features • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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CYStech Electronics Corp. Spec. No. : C863Q8 Issued Date : 2012.12.13 Revised Date : 2016.08.10 Page No. : 1/9 N -Channel Logic Level Enhancement Mo

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MOSFET – Power, Single N-Channel, SO8-FL 30 V, 462 A, 0.58 mW NTMFS0D55N03CG Features  Wide SOA to Improve Inrush Current Management  Advanced Pack

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resi

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March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode po

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