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25Q256JWEQ - 1.8V 256M-BIT SERIAL FLASH MEMORY
W25Q256JW 1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: December 08. 2017 - Revision B W25Q256JW Table of Contents 1.P87C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.M5M5256DP-70LL-I - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DES.28F256 - 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory
FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce.FM8PS56 - (FM8PS54 / FM8PS56) EPROM/ROM-Based 8-Bit Microcontroller Series
FEELING TECHNOLOGY Devices Included in this Data Sheet: ‧ FM8PS54E/S56E : EPROM devices ‧ FM8PS54/S56 : Mask ROM devices FM8PS54/S56 EPROM/ROM-Based.R5F5631DDDLJ - 100-MHz 32-bit RX MCU
Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0180 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, various com.R5F5631FDGFC - 100-MHz 32-bit RX MCU
Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0180 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, various com.MX25L25645G - 256M-BIT CMOS MXSMIO FLASH MEMORY
MX25L25645G MX25L25645G 3V, 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY Key Features • Protocol Support - Single I/O, Dual I.82S23 - 256-bit TTL bipolar PROM
Philips Semiconductors 256-bit TTL bipolar PROM (32 x 8) Product specification 82S23/82S123 DESCRIPTION The 82S23 and 82S123 are field programmable,.93C56A - 2-Kbit Microwire Compatible Serial EEPROM
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 2-Kbit Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range 93AA56A 93AA56B 93LC56A.A290021 - 256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - .HYB314265BJ-50 - 256K x 16-Bit EDO-Dynamic RAM
256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 144 words by 16-bit organizati.FM18W08 - 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory
FM18W08 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectr.DAC600 - 12-Bit 256MHz Monolithic DIGITAL-TO-ANALOG CONVERTER
® DAC600 DEMO BOARD AVAILABLE 12-Bit 256MHz Monolithic DIGITAL-TO-ANALOG CONVERTER FEATURES q 12-BIT RESOLUTION q 256MHz UPDATE RATE q –73dB HARMONI.CXA1056P - 8-Bit 30/50 MSPS Flash A/D Converter
.comwww.DataSheet4U.com www.DataSheet4Uwww.DataSheet4U.com .M27V201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION:.M27V256 - 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V256 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION:.M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .