5N65 Datasheet | Specifications & PDF Download

STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet − prod

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N65 ·FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static

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() CRJQ125N65G2BF SJMOS N-MOSFET 650V, 103mΩ, 27A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficienc

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5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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UNISONIC TECHNOLOGIES CO., LTD UTG75N65ND-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC

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MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 36 A, 95 mW NVB095N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high vo

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5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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NCE05N65D，NCE05N65, NCE05N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 fast and soft antiparallel diode IKZ75N65NH5 650V DuoPack IGBT and diode Hig

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IGBT NGTB75N65FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provid

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FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi

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STWA75N65DM6 Datasheet N-channel 650 V, 33 mΩ typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long leads package TO-247 long leads D(2, TAB) G(1) S(3

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UNISONIC TECHNOLOGIES CO., LTD UTG25N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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UNISONIC TECHNOLOGIES CO., LTD UTG75N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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IKZA75N65RH5 CoolSiC™ Hybrid Discrete CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode Featu

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UNISONIC TECHNOLOGIES CO., LTD 5N65K 5A, 650V N-CHANNEL POWER MOSFET „ DE SCRIPTION 1 Power MOSFET The U TC 5N65K is a high voltag e po wer MOSF ET

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GENERAL DESCRIPTION GPT05N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Ratin

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WFF5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Swi

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SLD5N65S / SLU5N65S SLD5N65S / SLU5N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar s

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SLB5N65S / SLI5N65S SLB5N65S / SLI5N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar s

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