5N65 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 5N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5A, 650Volts) DESCRIPTION The Nell 5N65 is a three-terminal sili

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N65 ·FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static

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5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :

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SLP5N65C / SLF5N65C SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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SEMICONDUCTOR TECHNICAL DATA KF5N65D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1

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UNISONIC TECHNOLOGIES CO., LTD 15N65 15A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanc

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SEMICONDUCTOR TECHNICAL DATA KPS15N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characterist

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5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer C

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N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS ID 15.0 A VDSS 650 V Rdson（Vgs=10V） 0.6 Ω Qg 36 nC Package    LED APPLICATIONS  Hig

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FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi

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WFF5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Swi

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IGB15N65S5 High speed switching series fifth generation TRENCHSTOPTM 5 high speed soft switching IGBT Features and Benefits: High speed S5 technol

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STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet − prod

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FGW75N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 75A Features Low power loss

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IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 fast and soft antiparallel diode IKZ75N65NH5 650V DuoPack IGBT and diode Hig

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IGW75N65H5 High speed series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology Features and Benefits: High speed H5 technology offerin

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NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct

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STU5N65M6 N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in an IPAK package Datasheet - production data Features Order code VDS RDS(on

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